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| Результаты поиска для PI16F676 | |
| Компонент | Описание | Производитель | PDF | Buy |
| K7A161830B-PI16 | 512Kx36 & 1Mx18 Synchronous SRAM | Samsung semiconductor |  |  |
| K7A161830B-PI16 | 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE | Samsung semiconductor | | |
| K7A163630B-PI16 | 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE | Samsung semiconductor | | |
| K7A163630B-PI16 | 512Kx36 & 1Mx18 Synchronous SRAM | Samsung semiconductor | | |
| CPI1608NHQ1R0MT | DC-DC converter circuits for mobile equipment | SAMWHA ELECTRIC | | |
| CPI1608NHQ2R2MT | DC-DC converter circuits for mobile equipment | SAMWHA ELECTRIC | | |
| CPI1608NHQ3R3MT | DC-DC converter circuits for mobile equipment | SAMWHA ELECTRIC | | |
| CPI1608NHQ4R7MT | DC-DC converter circuits for mobile equipment | SAMWHA ELECTRIC | | |
| DEPI1615 | Power Inductor< Pin Type: DEPI Series> | Sumida Corporation | | |
| IPI16CN10NG | OptiMOS^2 Power-Transistor Excellent gate charge x RDS(on) product (FOM) | Infineon Technologies AG | | |
| IPI16CN10NG | OptiMOS2 Power-Transistor | Infineon Technologies AG | | |
| IPI16CNE8NG | OptiMOS^2 Power-Transistor | Infineon Technologies AG | | |
| SPI16N50C3 | New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated | Infineon Technologies AG | | |
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