Результаты поиска для R2718

Компонент	Описание	Производитель	PDF	Buy
K4R271869B-MCG6	256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.	Samsung semiconductor
K4R271869B-MCK7	256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.	Samsung semiconductor
K4R271869B-MCK8	256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.	Samsung semiconductor
K4R271869B-NCG6	256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.	Samsung semiconductor
K4R271869B-NCK7	256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.	Samsung semiconductor
K4R271869B-NCK8	256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.	Samsung semiconductor

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