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Компонент | Описание | Производитель | PDF | Buy |
IRF320 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
IRF320 | 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs | Intersil Corporation | | |
IRF320 | N-Channel Power MOSFETs, 3.0 A, 350-400 V | Fairchild Semiconductor | | |
RF320-12 | HIGH REPEATABILITY ULTRAMINIATURE T0-5, RF BYPASS RELAY DC TO 3 GHz | Teledyne Technologies Incorporated | | |
IRF320-323 | N-Channel Power MOSFETs, 3.0 A, 350-400 V | Fairchild Semiconductor | | |
RF320-5 | HIGH REPEATABILITY ULTRAMINIATURE T0-5, RF BYPASS RELAY DC TO 3 GHz | Teledyne Technologies Incorporated | | |
IRF3202SPBF | HEXFET Power MOSFET | International Rectifier | | |
HRF3205 | 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs | Intersil Corporation | | |
IRF3205 | Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) | International Rectifier | | |
IRF3205 | Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) | International Rectifier | | |
HRF3205 | 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs | Fairchild Semiconductor | | |
IRF3205L | HEXFET Power MOSFET | International Rectifier | | |
IRF3205L | Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) | International Rectifier | | |
IRF3205PBF | HEXFET Power MOSFET | International Rectifier | | |
IRF3205S | Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) | International Rectifier | | |
IRF3205S | HEXFET Power MOSFET | International Rectifier | | |
HRF3205S | 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs | Fairchild Semiconductor | | |
HRF3205S | 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs | Intersil Corporation | | |
IRF3205SPBF | HEXFET^ Power MOSFET | International Rectifier | | |
IRF3205S_02 | HEXFET Power MOSFET | International Rectifier | | |
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