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| Результаты поиска для RF331 | |
| Компонент | Описание | Производитель | PDF | Buy |
| IRF331 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |  |  |
| IRF331 | N-Channel Power MOSFETs, 5.5A, 350 V/400V | Fairchild Semiconductor | | |
| MRF331 | The RF Line | Motorola, Inc | | |
| RF3315 | BROADBAND HIGH LINEARITY AMPLIFIER | RF Micro Devices | | |
| RF3315 | BROADBAND HIGH LINEARITY AMPLIFIER | RF Micro Devices | | |
| RF3315 | ROADBAND HIGH LINEARITY AMPLIFIER | RF Micro Devices | | |
| IRF3315 | Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A) | International Rectifier | | |
| IRF3315L | Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A) | International Rectifier | | |
| IRF3315LPBF | HEXFET Power MOSFET | International Rectifier | | |
| IRF3315PBF | HEXFET Power MOSFET | International Rectifier | | |
| RF3315PCBA-410 | BROADBAND HIGH LINEARITY AMPLIFIER | RF Micro Devices | | |
| RF3315PCBA-410 | BROADBAND HIGH LINEARITY AMPLIFIER | RF Micro Devices | | |
| RF3315PCBA-410 | ROADBAND HIGH LINEARITY AMPLIFIER | RF Micro Devices | | |
| RF3315PCBA-411 | BROADBAND HIGH LINEARITY AMPLIFIER | RF Micro Devices | | |
| RF3315PCBA-411 | BROADBAND HIGH LINEARITY AMPLIFIER | RF Micro Devices | | |
| RF3315PCBA-411 | ROADBAND HIGH LINEARITY AMPLIFIER | RF Micro Devices | | |
| IRF3315S | Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A) | International Rectifier | | |
| IRF3315SPBF | HEXFET Power MOSFET | International Rectifier | | |
| RF3315_06 | BROADBAND HIGH LINEARITY AMPLIFIER | RF Micro Devices | | |
| RF3315_1 | BROADBAND HIGH LINEARITY AMPLIFIER | RF Micro Devices | | |
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