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| Результаты поиска для T6N6P | |
| Компонент | Описание | Производитель | PDF | Buy |
| UPD5738T6N | WIDE BAND DPDT SWITCH | NEC |  |  |
| UPD5738T6N-E2 | WIDE BAND DPDT SWITCH | NEC | | |
| UPD5738T6N-E2-A | WIDE BAND DPDT SWITCH | NEC | | |
| MMFT6N03HD | TMOS POWER 6.0 AMPERES 30 VOLTS | Motorola, Inc | | |
| PHT6N03LT | TrenchMOS transistor Logic level FET | NXP Semiconductors | | |
| PHT6N03T | TrenchMOS transistor Standard level FET | NXP Semiconductors | | |
| PHT6N06 | TrenchMOS transistor Standard level FET | NXP Semiconductors | | |
| PHT6N06LT | TrenchMOS transistor Logic level FET | NXP Semiconductors | | |
| PHT6N06T | TrenchMOS transistor Standard level FET | NXP Semiconductors | | |
| IXFT6N100F | Power MOSFETs | IXYS Corporation | | |
| IXFT6N100Q | HiPerFET Power MOSFETs Q-Class | IXYS Corporation | | |
| IXTT6N120 | High Voltage Power MOSFET | IXYS Corporation | | |
| RT6N140C | TRANSISTOR WITH RESISTOR | Isahaya Electronics Corporation | | |
| IXBT6N170 | High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor | IXYS Corporation | | |
| IXGT6N170 | High Voltage IGBT | IXYS Corporation | | |
| IXGT6N170A | High Voltage IGBT | IXYS Corporation | | |
| IXGT6N170A | High Voltage IGBTs | IXYS Corporation | | |
| RT6N230C | TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE | Isahaya Electronics Corporation | | |
| RT6N430C | TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE | Isahaya Electronics Corporation | | |
| PB11D8AB1T6NEN | Sealed Ultraminiature Pushbutton Switches | GREATECS | | |
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