| Компонент | Описание | Производитель | PDF | Buy |
| AQV212 | GU (General Use) Type [1-Channel (Form A) Type] | Nais(Matsushita Electric Works) |  |  |
| AQV212 | Controls low-level input signals. Controls load voltage 60V to 600V. | Panasonic Semiconductor | | |
| ADV212 | JPEG 2000 Video Codec | Analog Devices | | |
| KAQV212 | High Voltage, Solid State Relay-MOSFET Output | COSMO Electronics Corporation | | |
| KSK-1A66-BV212 | KSK Reed Switch | Meder Electronic | | |
| JHV2120 | HIGH VOLTAGE RECTIFIER ASSEMBLY | Microsemi Corporation | | |
| KV2121 | VARACTOR DIODES Microwave Hyperabrupt Junction | Microsemi Corporation | | |
| KV2121-00 | VARACTOR DIODES Microwave Hyperabrupt Junction | Microsemi Corporation | | |
| KV2123 | ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES | Microsemi Corporation | | |
| KV2123 | ENHANCED PERFORMANCE SURFACE MOUNT EPSMHyperabrupt Varactor Diodes TM | Microsemi Corporation | | |
| MGFS45V2123 | 2.1 - 2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET | Mitsubishi Electric Semiconductor | | |
| MGFS45V2123A | 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET | Mitsubishi Electric Semiconductor | | |
| MGFS45V2123A | 2.1-2.3 GHz BAND / 32W | Mitsubishi Electric Semiconductor | | |
| MGFS45V2123A | 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET | Mitsubishi Electric Semiconductor | | |
| MGFS45V2123A_04 | 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET | Mitsubishi Electric Semiconductor | | |
| MGFS45V2123A_11 | 2.1-2.3 GHz BAND / 32W | Mitsubishi Electric Semiconductor | | |
| JHV2124 | HIGH VOLTAGE RECTIFIER ASSEMBLY | Microsemi Corporation | | |
| JHV2128 | HIGH VOLTAGE RECTIFIER ASSEMBLY | Microsemi Corporation | | |
| AQV212A | GU (General Use) Type [1-Channel (Form A) Type] | Nais(Matsushita Electric Works) | | |
| AQV212A | Controls low-level input signals. Controls load voltage 60V to 600V. | Panasonic Semiconductor | | |
