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| Результаты поиска для W20N | |
| Компонент | Описание | Производитель | PDF | Buy |
| MGW20N120 | Insulated Gate Bipolar Transistor | ON Semiconductor |  |  |
| MGW20N120 | Insulated Gate Bipolar Transistor | Motorola, Inc | | |
| IHW20N120R | Reverse Conducting IGBT with monolithic body diode | Infineon Technologies AG | | |
| IHW20N120R2 | Reverse Conducting IGBT with monolithic body diode | Infineon Technologies AG | | |
| IHW20N120R3 | Reverse conducting IGBT with monolithic body diode | Infineon Technologies AG | | |
| SW20N50 | N-channel Power MOSFET | Xian Semipower Electronic Technology Co., Ltd. | | |
| SWW20N50 | N-channel Power MOSFET | Xian Semipower Electronic Technology Co., Ltd. | | |
| PHW20N50E | PowerMOS transistors Avalanche energy rated | NXP Semiconductors | | |
| MTW20N50E | TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM | Motorola, Inc | | |
| SW20N60 | N-channel Power MOSFET | Xian Semipower Electronic Technology Co., Ltd. | | |
| SGW20N60 | Short Circuit Rated IGBT | Fairchild Semiconductor | | |
| SGW20N60 | Fast S-IGBT in NPT-technology | Infineon Technologies AG | | |
| SGW20N60 | Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation | Infineon Technologies AG | | |
| SKW20N60 | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | Infineon Technologies AG | | |
| SKW20N60 | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | Infineon Technologies AG | | |
| SWW20N60 | N-channel Power MOSFET | Xian Semipower Electronic Technology Co., Ltd. | | |
| SPW20N60C3 | Cool MOS Power Transistor | Infineon Technologies AG | | |
| SPW20N60C3 | Cool MOS Power Transistor | Infineon Technologies AG | | |
| SPW20N60C3_08 | Cool MOS Power Transistor | Infineon Technologies AG | | |
| SPW20N60CFD | Cool MOS Power Transistor | Infineon Technologies AG | | |
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