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| Результаты поиска для XD8401 | |
| Компонент | Описание | Производитель | PDF | Buy |
| CS5124XD8 | High Performance, Integrated Current Mode PWM Controllers | ON Semiconductor |  |  |
| CS5124XD8 | High Performance, Integrated Current Mode PWM Controllers | ON Semiconductor | | |
| CS5126XD8 | High Performance, Integrated Current Mode PWM Controllers | Cherry Semiconductor Corporation | | |
| CS5126XD8 | High Performance, Integrated Current Mode PWM Controllers | ON Semiconductor | | |
| PSXD80 | Diode Modules | Powersem GmbH | | |
| CXD8302Q | PLL for CCD Cameras | Sony Corporation | | |
| MAMX-008174-CXD860 | E-Series Surface Mount Mixer 1-1000MHz | Tyco Electronics | | |
| MAMX-008174-CXD860 | E-Series Surface Mount Mixer 1 to 1000 MHz | M/A-COM Technology Solutions, Inc. | | |
| BUXD87 | HIGH VOLTAGE NPN POWER TRANSISTOR | STMicroelectronics | | |
| BUXD87DPAK | HIGH VOLTAGE NPN POWER TRANSISTOR | STMicroelectronics | | |
| BUXD87IPAK | HIGH VOLTAGE NPN POWER TRANSISTOR | STMicroelectronics | | |
| BUXD87T | HIGH VOLTAGE NPN POWER TRANSISTOR | STMicroelectronics | | |
| B148.001XD8C | Time and hours meters electromechanic | Baumer IVO GmbH & Co. KG | | |
| B148.002XD8C | Time and hours meters electromechanic | Baumer IVO GmbH & Co. KG | | |
| B148.007XD8C | Time and hours meters electromechanic | Baumer IVO GmbH & Co. KG | | |
| W4NXD8C-0000 | Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
| W4NXD8C-L000 | Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
| W4NXD8C-S000 | Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
| W4NXD8D-0000 | Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
| W4NXD8D-S000 | Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
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