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| 12N06 DATASHEET | |
Компонент | Описание | Производитель | PDF | Buy |
12N06 | 12 Amps, 60 Volts N-CHANNEL POWER MOSFET | Unisonic Technologies | | |
| *12N06*: Расширенные результаты | |
Компонент | Описание | Производитель | PDF | Buy |
12N06 | 12 Amps, 60 Volts N-CHANNEL POWER MOSFET | Unisonic Technologies | | |
MTP12N06 | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM | Motorola, Inc | | |
RFP12N06 | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | Fairchild Semiconductor | | |
STD12N06 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STMicroelectronics | | |
M85049-36-12N06 | EMI/RFI Non-Environmental Backshell | Glenair, Inc. | | |
M85049-37-12N06 | EMI/RFI Non-Environmental Backshells | Glenair, Inc. | | |
M85049-76-12N06 | EMI/RFI Environmental Backshell | Glenair, Inc. | | |
M85049-77-12N06 | EMI/RFI Environmental Backshell | Glenair, Inc. | | |
M85049-1712N06A | EMI/RFI Environmental Backshell | Glenair, Inc. | | |
M85049-29-12N06A | Non-Environmental Strain Relief Backshells | Glenair, Inc. | | |
SG12N06DP | Discrete IGBTs | Sirectifier Semiconductors | | |
SG12N06DP | Discrete IGBTs | Sirectifier Global Corp. | | |
SG12N06DT | Discrete IGBTs | Sirectifier Semiconductors | | |
SG12N06DT | Discrete IGBTs | Sirectifier Global Corp. | | |
MTP12N06EZL | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM | Motorola, Inc | | |
12N06G-TN3-R | 12 Amps, 60 Volts N-CHANNEL POWER MOSFET | Unisonic Technologies | | |
STD12N06L | N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | STMicroelectronics | | |
STK12N06L | N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | STMicroelectronics | | |
12N06L-TN3-R | 12 Amps, 60 Volts N-CHANNEL POWER MOSFET | Unisonic Technologies | | |
SG12N06P | Discrete IGBTs | Sirectifier Semiconductors | | |
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