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![](/forums/images/ca_evo_db/misc/spacer.gif) | 1N1082A DATASHEET | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
1N1082A | 1N1081 | List of Unclassifed Manufacturers | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
![](/forums/images/ca_evo_db/misc/spacer.gif) | *1N10*: Расширенные результаты | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
RFL1N10 | 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs | Intersil Corporation | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MMFT1N10 | MEDIUM POWER TMOS FET 1 AMP 100 VOLTS | Motorola, Inc | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
SPB21N10 | SIPMOS Power-Transistor | Infineon Technologies AG | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
SPD11N10 | SIPMOS Power-Transistor | Infineon Technologies AG | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
SPU11N10 | SIPMOS Power-Transistor | Infineon Technologies AG | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
RSD201N10 | Nch 100V 20A Power MOSFET | Rohm | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
M85049-60-1N10 | Shrink Boot Adapters | Glenair, Inc. | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
M85049-78-11N10 | EMI/RFI Environmental Backshell | Glenair, Inc. | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
M85049-79-11N10 | EMI/RFI Environmental Backshell | Glenair, Inc. | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
M85049-79-21N10 | EMI/RFI Environmental Backshell | Glenair, Inc. | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
M85049-78-21N10 | EMI/RFI Environmental Backshell | Glenair, Inc. | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
81N10-H-AB3-I-R | VOLTAGE DETECTORS WITH BUILT-IN DELAY TIME | Unisonic Technologies | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
81N10-J-AB3-I-R | VOLTAGE DETECTORS WITH BUILT-IN DELAY TIME | Unisonic Technologies | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
81N10-R-AB3-I-R | VOLTAGE DETECTORS WITH BUILT-IN DELAY TIME | Unisonic Technologies | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
1N100 | Optimized for Radio Frequency Response | Microsemi Corporation | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
1N100 | GOLD BONDED GERMANIUM DIODE | List of Unclassifed Manufacturers | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
1N100 | GOLD BONDED DIODES | List of Unclassifed Manufacturers | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
UPF1N100 | SURFACE MOUNT N . CHANNEL MOSFET | Microsemi Corporation | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IXTA1N100 | High Voltage MOSFET | IXYS Corporation | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IXTH1N100 | High Voltage MOSFET | IXYS Corporation | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
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