| Компонент | Описание | Производитель | PDF | Buy |
| 1N5518 | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Deuices Incorporated |  |  |
| 1N5518 | LOW VOLTAGE AVALANCHE DIODES DO-35 | Microsemi Corporation | | |
| 1N5518 | LOW VOLTAGE AVALANCHE DIODES DO-35 | Microsemi Corporation | | |
| 1N5518 | SCHOTTKY RECTIERS SILICON RECTIFIER DIODES | List of Unclassifed Manufacturers | | |
| 1N5518 | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device | | |
| 1N5518 | LOW REVERSE LEAKAGE CHARACTERISTICS | Microsemi Corporation | | |
| 1N5518 | 0.4W LOW VOLTAGE AVALANCHE DIODES | New Jersey Semi-Conductor Products, Inc. | | |
| 1N5518 | LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE | Knox Semiconductor, Inc | | |
| 1N5518 | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW | Microsemi Corporation | | |
| 1N5518 | Low Voltage Avalanche 500 mW Zener Diodes DO-35 | Microsemi Corporation | | |
| JAN1N5518 | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW | Microsemi Corporation | | |
| JANTX1N5518 | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW | Microsemi Corporation | | |
| JANTXV1N5518 | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW | Microsemi Corporation | | |
| 1N5518-1 | LOW VOLTAGE AVALANCHE DIODES DO-35 | Microsemi Corporation | | |
| 1N5518-1 | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW | Microsemi Corporation | | |
| JAN1N5518-1 | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW | Microsemi Corporation | | |
| JANTX1N5518-1 | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW | Microsemi Corporation | | |
| JANTXV1N5518-1 | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW | Microsemi Corporation | | |
| 1N5518A | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW | Microsemi Corporation | | |
| 1N5518A | LOW VOLTAGE AVALANCHES SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES | New Jersey Semi-Conductor Products, Inc. | | |
