| Компонент | Описание | Производитель | PDF | Buy |
| 2N4012 | HIGH-POWER SILICON N-P-N TRANSISTOR | New Jersey Semi-Conductor Products, Inc. |  |  |
| 2N4013 | SWITCHING TRANSISTOR NPN SILICON | New Jersey Semi-Conductor Products, Inc. | | |
| 2N4013 | HIGH SPEED NPN SILICON PLANAR EPITAXIAL | New Jersey Semi-Conductor Products, Inc. | | |
| 2N4014 | HIGH-VOLTAGE, HIGH CURRENT SWITCH | STMicroelectronics | | |
| 2N4014 | HIGH SPEED NPN SILICON PLANAR EPITAXIAL | New Jersey Semi-Conductor Products, Inc. | | |
| 2N4014 | SWITCHING TRANSISTOR NPN SILICON | New Jersey Semi-Conductor Products, Inc. | | |
| 2N4015 | Dual Transistors | Central Semiconductor Corp | | |
| 2N4015 | SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS | List of Unclassifed Manufacturers | | |
| 2N4016 | Dual Transistors | Central Semiconductor Corp | | |
| 2N4016 | SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS | List of Unclassifed Manufacturers | | |
| R1112N401A | LOW NOISE 150mA LDO REGULATOR | RICOH electronics devices division | | |
| R1122N401A | LOW NOISE 150mA LDO REGULATOR | RICOH electronics devices division | | |
| R3112N401A | LOW VOLTAGE DETECTOR WITH OUTPUT DELAY | RICOH electronics devices division | | |
| R3112N401A | MARK INFORMATION ME-R3112N-0310 R3112N SERIES MARK SPECIFICATION | RICOH electronics devices division | | |
| R1172N401A | SUPER LOW ON RESISTANCE / LOW VOLTAGE 1A LDO | RICOH electronics devices division | | |
| R1112N401A-TL | LOW NOISE 150mA LDO REGULATOR | RICOH electronics devices division | | |
| R1122N401A-TL | LOW NOISE 150mA LDO REGULATOR | RICOH electronics devices division | | |
| R1112N401A-TR | LOW NOISE 150mA LDO REGULATOR | RICOH electronics devices division | | |
| R1122N401A-TR | LOW NOISE 150mA LDO REGULATOR | RICOH electronics devices division | | |
| R1112N401B | LOW NOISE 150mA LDO REGULATOR | RICOH electronics devices division | | |
