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| 2N6841 DATASHEET | |
Компонент | Описание | Производитель | PDF | Buy |
2N6841 | SI NPN POWER BJT | New Jersey Semi-Conductor Products, Inc. | | |
| *2N684*: Расширенные результаты | |
Компонент | Описание | Производитель | PDF | Buy |
2N684 | SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS | Central Semiconductor Corp | | |
2N684 | DIFFUSED SILICON PNPN CINTROLLED RECTIFIER | New Jersey Semi-Conductor Products, Inc. | | |
2N6841 | SI NPN POWER BJT | New Jersey Semi-Conductor Products, Inc. | | |
2N6845 | POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A) | International Rectifier | | |
2N6845 | P-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | Seme LAB | | |
2N6845 | P-CHANNEL ENHANCEMENT MOSFET | New Jersey Semi-Conductor Products, Inc. | | |
JANTX2N6845 | POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A) | International Rectifier | | |
JANTXV2N6845 | POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A) | International Rectifier | | |
2N6845LCC4 | PCHANNEL POWER MOSFET | Seme LAB | | |
2N6847 | P-Channel MOSFET in a Hermetically sealed TO39 Metal Package | Seme LAB | | |
JANTX2N6847 | HEXFET TRANSISTORS THRU-HOLE (TO-205AF) | International Rectifier | | |
JANTXV2N6847 | HEXFET TRANSISTORS THRU-HOLE (TO-205AF) | International Rectifier | | |
JANTX2N6847U | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) | International Rectifier | | |
JANTXV2N6847U | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) | International Rectifier | | |
2N6849 | P.CHANNEL POWER MOSFETs | Seme LAB | | |
2N6849 | P-CHANNEL MOSFET | Microsemi Corporation | | |
2N6849 | P-CHANNEL MOSFET | Microsemi Corporation | | |
2N6849 | P-CHANNEL ENHANCEMENT MOSFET | New Jersey Semi-Conductor Products, Inc. | | |
JANS2N6849 | POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) | International Rectifier | | |
JANTX2N6849 | POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) | International Rectifier | | |
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