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| 2SC5812WG-TR-E DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
2SC5812WG-TR-E | Silicon NPN Epitaxial VHF/UHF wide band amplifier | Renesas Technology Corp |  |  |
| *2SC581*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| 2SC5810 | TOSHIBA Transistor Silicon NPN Epitaxial Type | Toshiba Semiconductor | | |
| 2SC5811 | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications | Sanyo Semicon Device | | |
| 2SC5812 | Silicon NPN Epitaxial VHF/UHF wide band amplifier | Hitachi Semiconductor | | |
| 2SC5812 | Silicon NPN Epitaxial VHF/UHF wide band amplifier | Renesas Technology Corp | | |
| 2SC5812WG-TR-E | Silicon NPN Epitaxial VHF/UHF wide band amplifier | Renesas Technology Corp | | |
| 2SC5813 | Silicon NPN epitaxial planar type | Panasonic Semiconductor | | |
| 2SC5814 | For Low Frequency Amplify Application Silicon NPN Epitaxial Type | Isahaya Electronics Corporation | | |
| 2SC5815 | For Low Frequency Amplify Application Silicon NPN Epitaxial Type | Isahaya Electronics Corporation | | |
| 2SC5816 | For Low Frequency Amplify Application Silicon NPN Epitaxial Type | Isahaya Electronics Corporation | | |
| 2SC5817 | For Low Frequency Amplify Application Silicon NPN Epitaxial Type | Isahaya Electronics Corporation | | |
| 2SC5819 | High-Speed Switching Applications DC-DC Converter Applications | Toshiba Semiconductor | | |
| 2SC5819 | High-Speed Switching Applications | Toshiba Semiconductor | | |
| 2SC5819_04 | High-Speed Switching Applications | Toshiba Semiconductor | | |
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