| Компонент | Описание | Производитель | PDF | Buy |
| B3669 | SAW Components Low-Loss Filter 2140 MHz | EPCOS |  |  |
| B3669 | SAW Tx filter W-CDMA IF | EPCOS | | |
| 2N3669 | 12.5A SILICON CONTROLLED RECTIFIERS | General Semiconductor | | |
| 2N3669 | SILICON CONTROLLED RECTIFIER 16AMPS 220 THRU 800 VOLTS JEDEC TO-3 CASE | Central Semiconductor Corp | | |
| DS3669 | Quad High Current Peripheral Driver | National Semiconductor | | |
| HI3669 | NPN EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity Mocroelectronics | | |
| HJ3669 | NPN EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity Mocroelectronics | | |
| HA3669 | NPN EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity Mocroelectronics | | |
| GM3669 | NPN EPITAXIAL PLANAR TRANSISTOR | GTM CORPORATION | | |
| HM3669 | NPN EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity Mocroelectronics | | |
| GI3669 | PNP EPITAXIAL PLANAR TRANSISTOR | GTM CORPORATION | | |
| GJ3669 | PNP EPITAXIAL PLANAR TRANSISTOR | GTM CORPORATION | | |
| 2SC3669 | NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS) | Toshiba Semiconductor | | |
| 2SC3669 | POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS | Unisonic Technologies | | |
| 2SC3669 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications | Toshiba Semiconductor | | |
| 2SC3669 | POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS | Unisonic Technologies | | |
| 2SK3669 | Switching Regulator, Audio Amplifier and Motor Drive Applications | Toshiba Semiconductor | | |
| 2SK3669 | Switching Regulators, for Audio Amplifier and Motor Drive Applications | Toshiba Semiconductor | | |
| 2SK3669 | Silicon N-Channel MOS Type Switching Regulator, Audio Amplifier and Motor Drive Applications | Toshiba Semiconductor | | |
| MAX3669 | 3.3V, 622Mbps SDH/SONET Laser Driver with Current Monitors and APC | Maxim Integrated Products | | |
