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| 3EZ6.8_09 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
3EZ6.8_09 | SILICON ZENER DIODES | Pan Jit International Inc. |  |  |
| *3EZ6.8_*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| 3EZ6.8D | 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-20% tolerance. | Jinan Gude Electronic Device | | |
| 3EZ6.8D1 | 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-1% tolerance. | Jinan Gude Electronic Device | | |
| 3EZ6.8D10 | SILICON ZENER DIODES | EIC discrete Semiconductors | | |
| 3EZ6.8D2 | 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-2% tolerance. | Jinan Gude Electronic Device | | |
| 3EZ6.8D3 | 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-3% tolerance. | Jinan Gude Electronic Device | | |
| 3EZ6.8D4 | 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-4% tolerance. | Jinan Gude Electronic Device | | |
| 3EZ6.8D5 | SILICON ZENER DIODES | EIC discrete Semiconductors | | |
| 3EZ6.8D5 | 3W SILICON ZENER DIODE | Jinan Gude Electronic Device | | |
| 3EZ6.8D5 | SILICON ZENER DIODES | SynSemi, Inc. | | |
| 3EZ6.8D5 | Ref/Reg Diode, P(D) = 1W | New Jersey Semi-Conductor Products, Inc. | | |
| 3EZ6.8_09 | SILICON ZENER DIODES | Pan Jit International Inc. | | |
| 1SMB3EZ6.8_09 | GLASS PASSIVATED JUNCTION SILICON ZENER DIODES | Pan Jit International Inc. | | |
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