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| 5N60_11 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
5N60_11 | 5A, 600V N-CHANNEL POWER MOSFET | Unisonic Technologies |  |  |
| *5N60_1*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| H5N6001P | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology Corp | | |
| H5N6001P | Silicon N-Channel MOSFET High-Speed Power Switching | Renesas Technology Corp | | |
| H5N6001P_05 | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology Corp | | |
| KHB7D5N60F1 | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC(Korea Electronics) | | |
| KHB7D5N60F1 | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC(Korea Electronics) | | |
| KHB7D5N60P1 | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC(Korea Electronics) | | |
| KHB7D5N60P1 | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC(Korea Electronics) | | |
| KHB7D5N60P1_07 | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC(Korea Electronics) | | |
| NGTB15N60S1EG | IGBT - Short-Circuit Rated | ON Semiconductor | | |
| NGTG15N60S1EG | IGBT - Short-Circuit Rated | ON Semiconductor | | |
| SSG55N60_1 | 1.65 V saturation ultrafast IGBT | Solid States Devices, Inc | | |
| 5N60_10 | 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET | Unisonic Technologies | | |
| AOT5N60_10 | 600V,5A N-Channel MOSFET | Alpha & Omega Semiconductors | | |
| 5N60_11 | 5A, 600V N-CHANNEL POWER MOSFET | Unisonic Technologies | | |
| 15N60_12 | 15A, 600V N-CHANNEL POWER MOSFET | Unisonic Technologies | | |
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