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![](/forums/images/ca_evo_db/misc/spacer.gif) | AT-109SMB DATASHEET | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
AT-109SMB | Voltage Variable Absorptive Attenuator 35 dB, 0.5 - 2.0 GHz | M/A-COM Technology Solutions, Inc. | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
![](/forums/images/ca_evo_db/misc/spacer.gif) | *AT-10*: Расширенные результаты | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
GAT-10 | Miniature Plastic Fixed Attenuators | Mini-Circuits | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
HN58V65AT-10 | 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) | Hitachi Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
HN58V66AT-10 | 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) | Hitachi Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
LC35256AT-10 | 256 K (32768 words X 8 bits) SRAM with OE and CE control Pins | Sanyo Semicon Device | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
GS72116AT-10 | 128K x 16 2Mb Asynchronous SRAM | GSI Technology | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
W24L010AT-10 | 128K X 8 High Speed CMOS Static RAM | Winbond | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
W24L011AT-10 | 128K X 8 High Speed CMOS Static RAM | Winbond | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
W26L010AT-10 | 64K X 16 High Speed CMOS Static RAM | Winbond | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
HN58V65AT-10 | 64 k EEPROM (8-kword ‡ 8-bit) Ready/Busy Function, RES Function (HN58V66A) | Renesas Technology Corp | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
HN58V66AT-10 | 64 k EEPROM (8-kword ‡ 8-bit) Ready/Busy Function, RES Function (HN58V66A) | Renesas Technology Corp | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
CLM2810AT-10 | 10 V, 1.0 A low dropout regulator | Calogic, LLC | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
HN58C256AT-10 | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) | Hitachi Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
HN58C257AT-10 | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) | Hitachi Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
GS840F18AT-10 | 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs | GSI Technology | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
GS840F32AT-10 | 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs | GSI Technology | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
GS840F36AT-10 | 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs | GSI Technology | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
GS840FH32AT-10 | 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs | GSI Technology | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
GS840FH36AT-10 | 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs | GSI Technology | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
GS840FH18AT-10 | 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs | GSI Technology | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
PEEL22CV10AT-10 | PEEL 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device | Anachip Corp | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
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