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| BAS32L_08 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
BAS32L_08 | High-speed switching diode | NXP Semiconductors |  |  |
| *BAS3*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| DBCDINF16BAS3 | DIN 41612 TYPE B - FEMALE | Dubilier | | |
| DBCDINF32BAS3 | DIN 41612 TYPE B - FEMALE | Dubilier | | |
| DBCDINF64BAS3 | DIN 41612 TYPE B - FEMALE | Dubilier | | |
| DBCDINM16BAS3 | DIN 41612 TYPE B - MALE | Dubilier | | |
| DBCDINM32BAS3 | DIN 41612 TYPE B - MALE | Dubilier | | |
| DBCDINM64BAS3 | DIN 41612 TYPE B - MALE | Dubilier | | |
| DBCDINF16HBAS3 | DIN 41612 TYPE HALF B (HB) - FEMALE | Dubilier | | |
| DBCDINF32HBAS3 | DIN 41612 TYPE HALF B (HB) - FEMALE | Dubilier | | |
| DBCDINM16HBAS3 | DIN 41612 TYPE HALF B (HB) - MALE | Dubilier | | |
| DBCDINM32HBAS3 | DIN 41612 TYPE HALF B (HB) - MALE | Dubilier | | |
| BAS3005A | Low VF Schottky Diode | Infineon Technologies AG | | |
| BAS3005B | Medium Power AF Schottky Diode | Infineon Technologies AG | | |
| BAS3010B | Medium Power AF Schottky Diode | Infineon Technologies AG | | |
| BAS31 | General purpose controlled avalanche double diodes | NXP Semiconductors | | |
| BAS31 | DUAL SURFACE MOUNT SWITCHING DIODE | Transys Electronics | | |
| BAS31 | SURFACE MOUNT SWITCHING DIODES | Jinan Gude Electronic Device | | |
| BAS31 | High Voltage General Purpose Diode | Fairchild Semiconductor | | |
| BAS31 | SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE | TRANSYS Electronics Limited | | |
| BAS31 | General Purpose Controlled Avalanche Diodes | Guangdong Kexin Industrial Co.,Ltd | | |
| BAS31 | General purpose controlled avalanche (double) diodes | NXP Semiconductors | | |
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