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| BCR10PN DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
BCR10PN | NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) | Siemens Semiconductor Group |  |  |
| *BCR10P*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| BCR10PM | MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Semiconductor | | |
| BCR10PM | Isolated Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors | | |
| BCR10PM | MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 | Renesas Technology Corp | | |
| BCR10PM-12 | Isolated Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors | | |
| BCR10PM-12L | Isolated Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors | | |
| BCR10PM-12LA | Triac | Renesas Technology Corp | | |
| BCR10PM-12LA-A8 | Triac | Renesas Technology Corp | | |
| BCR10PM-12LD | Triac Medium Power Use (The product guaranteed maximum junction temperature of 150`C) | Renesas Technology Corp | | |
| BCR10PM-12LD-A8 | Triac Medium Power Use (The product guaranteed maximum junction temperature of 150`C) | Renesas Technology Corp | | |
| BCR10PM-12LG | Triac Medium Power Use | Renesas Technology Corp | | |
| BCR10PM-12LG | Triac Medium Power Use | Renesas Technology Corp | | |
| BCR10PM-12LG-A8 | Triac Medium Power Use | Renesas Technology Corp | | |
| BCR10PM-12LG-A8 | Triac Medium Power Use | Renesas Technology Corp | | |
| BCR10PM-12LG_07 | Triac Medium Power Use | Renesas Technology Corp | | |
| BCR10PM-8 | Isolated Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors | | |
| BCR10PM-8L | Isolated Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors | | |
| BCR10PN | NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) | Siemens Semiconductor Group | | |
| BCR10PN | NPN/PNP Silicon Digital Transistor Array | Infineon Technologies AG | | |
| BCR10PN | NPN/PNP Silicon Digital Transistor Array | Infineon Technologies AG | | |
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