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| CN1E330KR DATASHEET | |
Компонент | Описание | Производитель | PDF | Buy |
CN1E330KR | CHIP TYPE, NON-POLARIZED | DB Lectro Inc | | |
| *CN1E*: Расширенные результаты | |
Компонент | Описание | Производитель | PDF | Buy |
NAND01GR3A0CN1E | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | STMicroelectronics | | |
NAND01GR3A2CN1E | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | STMicroelectronics | | |
NAND01GR3B2CN1E | 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory | STMicroelectronics | | |
NAND01GR4A0CN1E | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | STMicroelectronics | | |
NAND01GR4A2CN1E | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | STMicroelectronics | | |
NAND01GR4B2CN1E | 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory | STMicroelectronics | | |
NAND01GW3A2CN1E | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | STMicroelectronics | | |
NAND01GW3B2CN1E | 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory | STMicroelectronics | | |
NAND01GW4A0CN1E | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | STMicroelectronics | | |
NAND01GW4A2CN1E | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | STMicroelectronics | | |
NAND01GW4B2CN1E | 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory | STMicroelectronics | | |
NAND01GW4B2CN1E | 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory | Numonyx B.V | | |
NAND02GR4B2CN1E | 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory | STMicroelectronics | | |
NAND02GW3B2CN1E | 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory | STMicroelectronics | | |
NAND04GR3B4CN1E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND04GR4B2CN1E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND04GW3B2CN1E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND04GW3B4CN1E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND04GW4B2CN1E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND08GR3B4CN1E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
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