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| D6N102-3 DATASHEET | |
Компонент | Описание | Производитель | PDF | Buy |
D6N102-3 | 1~2ADC 90~180VDC | Nihon Inter Electronics Corporation | | |
| *D6N10*: Расширенные результаты | |
Компонент | Описание | Производитель | PDF | Buy |
MTD6N10 | POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT | Motorola, Inc | | |
STD6N10 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STMicroelectronics | | |
CTRJG26D6N1001A | Integrated RJ45 Magnetic Connectors | Central Technologies | | |
CTRJG29D6N1001A | Integrated RJ45 Magnetic Connectors | Central Technologies | | |
CTRJG31D6N1001A | Integrated RJ45 Magnetic Connectors | Central Technologies | | |
CTRJG26D6N1002A | Integrated RJ45 Magnetic Connectors | Central Technologies | | |
CTRJG29D6N1002A | Integrated RJ45 Magnetic Connectors | Central Technologies | | |
CTRJG31D6N1002A | Integrated RJ45 Magnetic Connectors | Central Technologies | | |
CTRJG26D6N1003A | Integrated RJ45 Magnetic Connectors | Central Technologies | | |
CTRJG29D6N1003A | Integrated RJ45 Magnetic Connectors | Central Technologies | | |
CTRJG31D6N1003A | Integrated RJ45 Magnetic Connectors | Central Technologies | | |
D6N101 | 1~2ADC 90~180VDC | Nihon Inter Electronics Corporation | | |
D6N102-3 | 1~2ADC 90~180VDC | Nihon Inter Electronics Corporation | | |
PHD6N10E | PowerMOS transistor | NXP Semiconductors | | |
MTD6N10E | TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM | Motorola, Inc | | |
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