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![](/forums/images/ca_evo_db/misc/spacer.gif) | F1012 DATASHEET | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
F1012 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
![](/forums/images/ca_evo_db/misc/spacer.gif) | *F1012*: Расширенные результаты | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
F1012 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
BF1012 | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network | Siemens Semiconductor Group | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
SF1012 | SF1012 | MTRONPTI | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
PTF10120 | 120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor | Ericsson | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MRF10120 | MICROWAVE POWER TRANSISTOR NPN SILICON | Tyco Electronics | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MRF10120 | Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960-1215MHz | M/A-COM Technology Solutions, Inc. | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MRF10120 | MICROWAVE POWER TRANSISTOR | Motorola, Inc | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
CMF10120D | Silicon Carbide Power MOSFET | Cree, Inc | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
PTF10122 | 50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor | Ericsson | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
PTF10125 | 135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor | Ericsson | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
DSPIC30F1012AT-20I/P | High-Performance, 16-bit Digital Signal Controllers | Microchip Technology | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
DSPIC30F1012AT-30I/P | High-Performance, 16-bit Digital Signal Controllers | Microchip Technology | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
DSPIC30F1012BT-20I/P | High-Performance, 16-bit Digital Signal Controllers | Microchip Technology | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
DSPIC30F1012CT-20I/P | High-Performance, 16-bit Digital Signal Controllers | Microchip Technology | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
BF1012S | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | Siemens Semiconductor Group | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MF1012S-1 | FOR GPS SYSTEM | Mitsubishi Electric Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
BF1012W | SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) | Siemens Semiconductor Group | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
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