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![](/forums/images/ca_evo_db/misc/spacer.gif) | F1516 DATASHEET | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
F1516 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
![](/forums/images/ca_evo_db/misc/spacer.gif) | *F1516*: Расширенные результаты | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
F1516 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
PIC16F1516 | 28/40/44-Pin Flash Microcontrollers with nanoWatt XLP Technology | Microchip Technology | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
PIC16LF1516 | 28/40/44-Pin Flash Microcontrollers with nanoWatt XLP Technology | Microchip Technology | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4F151611 | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4F151611D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4F151611D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4F151611D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4F151611D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4F151612D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4F151612D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4F151612D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4F151612D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
ATF1516AE-10 | 2nd Generation EE Complex Programmable Logic Devices | ATMEL Corporation | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
ATF1516AE-5 | 2nd Generation EE Complex Programmable Logic Devices | ATMEL Corporation | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
ATF1516AE-7 | 2nd Generation EE Complex Programmable Logic Devices | ATMEL Corporation | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
ATF1516AS | High Performance EE-Based CPLD | ATMEL Corporation | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
ATF1516AS-10QC160 | High Performance EE-Based CPLD | ATMEL Corporation | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
ATF1516AS-10QHC208 | High Performance EE-Based CPLD | ATMEL Corporation | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
ATF1516AS-10UC192 | High Performance EE-Based CPLD | ATMEL Corporation | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
ATF1516AS-15Q160 | High Performance EE-Based CPLD | ATMEL Corporation | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
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