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| F9890-11 DATASHEET | |
Компонент | Описание | Производитель | PDF | Buy |
F9890-11 | HIGH TIME RESOLUTION TOF-MS DETECTOR HIGH VOLTAGE FLOATING OPERATION | Hamamatsu Corporation | | |
| *F989*: Расширенные результаты | |
Компонент | Описание | Производитель | PDF | Buy |
BF989 | N-channel dual-gate MOS-FET | NXP Semiconductors | | |
C8051F989 | Ultra Low Power, High-Performance MCU | Silicon Laboratories | | |
C8051F989-GM | Ultra Low Power, 8-2 kB Flash, Capacitive Sensing MCU | Silicon Laboratories | | |
F9890-11 | HIGH TIME RESOLUTION TOF-MS DETECTOR HIGH VOLTAGE FLOATING OPERATION | Hamamatsu Corporation | | |
F9890-12 | HIGH TIME RESOLUTION TOF-MS DETECTOR HIGH VOLTAGE FLOATING OPERATION | Hamamatsu Corporation | | |
F9890-13 | HIGH TIME RESOLUTION TOF-MS DETECTOR ANODE GROUND TYPE | Hamamatsu Corporation | | |
F9890-14 | HIGH TIME RESOLUTION TOF-MS DETECTOR ANODE GROUND TYPE | Hamamatsu Corporation | | |
F9892-11 | HIGH TIME RESOLUTION TOF-MS DETECTOR HIGH VOLTAGE FLOATING OPERATION | Hamamatsu Corporation | | |
F9892-12 | HIGH TIME RESOLUTION TOF-MS DETECTOR HIGH VOLTAGE FLOATING OPERATION | Hamamatsu Corporation | | |
F9892-13 | HIGH TIME RESOLUTION TOF-MS DETECTOR ANODE GROUND TYPE | Hamamatsu Corporation | | |
F9892-14 | HIGH TIME RESOLUTION TOF-MS DETECTOR ANODE GROUND TYPE | Hamamatsu Corporation | | |
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