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| FD900R12IP4D DATASHEET | |
Компонент | Описание | Производитель | PDF | Buy |
FD900R12IP4D | PrimePACK2 Modul mit Trench/Feldstopp IGBT4, groberer Emitter Controlled 4 Diode | Infineon Technologies AG | | |
| *FD90*: Расширенные результаты | |
Компонент | Описание | Производитель | PDF | Buy |
FD900R12IP4D | PrimePACK2 Modul mit Trench/Feldstopp IGBT4, groberer Emitter Controlled 4 Diode | Infineon Technologies AG | | |
IRFD9010 | HEXFET^ TRANSISTORS P-CHANNEL HEXDIP | International Rectifier | | |
IRFD9010 | Power MOSFET | Vishay Siliconix | | |
IRFD9014 | Power MOSFET | Vishay Siliconix | | |
IRFD9014 | Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-1.1A) | International Rectifier | | |
SIHFD9014 | Power MOSFET | Vishay Siliconix | | |
SIHFD9014-E3 | Power MOSFET | Vishay Siliconix | | |
IRFD9014PBF | HEXFET^ POWER MOSFET | International Rectifier | | |
IRFD9014PBF | Power MOSFET | Vishay Siliconix | | |
IRFD9020 | HEXFET TRANSISTORS P CHANNEL HEXDIP | International Rectifier | | |
IRFD9020 | Power MOSFET | Vishay Siliconix | | |
SIHFD9020 | Power MOSFET | Vishay Siliconix | | |
SIHFD9020-E3 | Power MOSFET | Vishay Siliconix | | |
IRFD9020PBF | Power MOSFET | Vishay Siliconix | | |
IRFD9022 | HEXFET TRANSISTORS P CHANNEL HEXDIP | International Rectifier | | |
IRFD9024 | Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-1.6A) | International Rectifier | | |
IRFD9024PBF | HEXFET Power MOSFET | International Rectifier | | |
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