| Компонент | Описание | Производитель | PDF | Buy |
| RFMA2124-0.5W | 21.2 - 23.6 GHz Power Amplifier MMIC | Excelics Semiconductor, Inc. |  |  |
| RFMA2124-1W | 21.2 - 23.6 GHz Power Amplifier MMIC | Excelics Semiconductor, Inc. | | |
| RFMA2124-2W-P3 | 21.2 - 23.6 GHz Power Amplifier MMIC | Excelics Semiconductor, Inc. | | |
| FMA219 | X-BAND LNA MMIC | Filtronic Compound Semiconductors | | |
| FMA219 | X-BAND LNA MMIC | Filtronic Compound Semiconductors | | |
| FMA219_1 | X-BAND LNA MMIC | Filtronic Compound Semiconductors | | |
| FMA246 | HIGH-GAIN X-BAND MMIC | Filtronic Compound Semiconductors | | |
| FMA246 | HIGH GAIN X-BAND MMIC AMPLIFIER | Filtronic Compound Semiconductors | | |
| FMA246_1 | HIGH GAIN X-BAND MMIC AMPLIFIER | Filtronic Compound Semiconductors | | |
| FMA2A | Emitter common (dual digital transistors) | Rohm | | |
| FDFMA2N028Z | Integrated N-Channel PowerTrench MOSFET and Schottky Diode | Fairchild Semiconductor | | |
| FDFMA2N028Z | Integrated N-Channel PowerTrench^ MOSFET and Schottky Diode 20V, 3.7A, 68mY | Fairchild Semiconductor | | |
| FDFMA2N028Z_08 | Integrated N-Channel PowerTrench^ MOSFET and Schottky Diode 20V, 3.7A, 68mY | Fairchild Semiconductor | | |
| FDFMA2P029Z | Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3.1A, 95mohm | Fairchild Semiconductor | | |
| FDFMA2P029Z | Integrated P-Channel PowerTrench^ MOSFET and Schottky Diode .20V, .3.1A, 95m | Fairchild Semiconductor | | |
| FDFMA2P029Z_08 | Integrated P-Channel PowerTrench^ MOSFET and Schottky Diode .20V, .3.1A, 95m | Fairchild Semiconductor | | |
| FDFMA2P853 | Integrated P-Channel PowerTrench MOSFET and Schottky Diode | Fairchild Semiconductor | | |
| FDFMA2P853 | Integrated P-Channel PowerTrench^ MOSFET and Schottky Diode | Fairchild Semiconductor | | |
| FDFMA2P853 | Integrated P-Channel PowerTrench^ MOSFET and Schottky Diode | Fairchild Semiconductor | | |
| FDFMA2P853T | Integrated P-Channel PowerTrench^ MOSFET and Schottky Diode | Fairchild Semiconductor | | |
