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![](/forums/images/ca_evo_db/misc/spacer.gif) | FW513 DATASHEET | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
FW513 | MOSFET : N-Channel Silicon MOSFET FRD : Ultrahigh-Speed Switching Diode Switching Device Applications | Sanyo Semicon Device | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
![](/forums/images/ca_evo_db/misc/spacer.gif) | *FW51*: Расширенные результаты | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
S30MS01GP25BFW510 | 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology | SPANSION | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
S30MS01GP25TFW510 | 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology | SPANSION | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
S30MS512P25BFW510 | 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology | SPANSION | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
S30MS512P25TFW510 | 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology | SPANSION | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IRFW510A | N-CHANNEL POWER MOSFET | Fairchild Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
S30MS01GP25BFW512 | 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology | SPANSION | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
S30MS01GP25TFW512 | 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology | SPANSION | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
S30MS512P25BFW512 | 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology | SPANSION | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
S30MS512P25TFW512 | 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology | SPANSION | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
FW513 | MOSFET : N-Channel Silicon MOSFET FRD : Ultrahigh-Speed Switching Diode Switching Device Applications | Sanyo Semicon Device | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
S30MS01GP25BFW513 | 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology | SPANSION | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
S30MS01GP25TFW513 | 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology | SPANSION | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
S30MS512P25BFW513 | 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology | SPANSION | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
S30MS512P25TFW513 | 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology | SPANSION | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
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