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| G2314 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
G2314 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM CORPORATION |  |  |
| *G2314*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| G2314 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM CORPORATION | | |
| SMG2314 | N-Channel Enhancement Mode Power Mos.FET | SeCoS Halbleitertechnologie GmbH | | |
| SMG2314N | N-Channel Enhancement Mode MOSFET | SeCoS Halbleitertechnologie GmbH | | |
| SMG2314NE | N-Channel Enhancement Mode Mos.FET | SeCoS Halbleitertechnologie GmbH | | |
| UPG2314T5N | GaAs HBT INTEGRATED CIRCUIT | California Eastern Labs | | |
| UPG2314T5N | POWER AMPLIFIER FOR BluetoothTM Class 1 | California Eastern Labs | | |
| UPG2314T5N-E2 | GaAs HBT INTEGRATED CIRCUIT | California Eastern Labs | | |
| UPG2314T5N-E2 | POWER AMPLIFIER FOR BluetoothTM Class 1 | California Eastern Labs | | |
| UPG2314T5N-E2-A | GaAs HBT INTEGRATED CIRCUIT | California Eastern Labs | | |
| UPG2314T5N-E2-A | POWER AMPLIFIER FOR BluetoothTM Class 1 | California Eastern Labs | | |
| UPG2314T5N_0607 | POWER AMPLIFIER FOR BluetoothTM Class 1 | California Eastern Labs | | |
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