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| IBC32AEN4896J DATASHEET | |
Компонент | Описание | Производитель | PDF | Buy |
IBC32AEN4896J | 5:1 Eighth-Brick IBC | Emerson Network Power | | |
| *IBC3*: Расширенные результаты | |
Компонент | Описание | Производитель | PDF | Buy |
IRFIBC30 | Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A) | International Rectifier | | |
IBC30AQS4812J | 2nd Generation IBC | Emerson Network Power | | |
IRG4IBC30F | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | International Rectifier | | |
IRG4IBC30FD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | International Rectifier | | |
IRFIBC30G | Power MOSFET | Vishay Siliconix | | |
IRFIBC30G | Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A) | International Rectifier | | |
SIHFIBC30G | Power MOSFET | Vishay Siliconix | | |
SIHFIBC30G-E3 | Power MOSFET | Vishay Siliconix | | |
IRFIBC30GPBF | HEXFET Power MOSFET | International Rectifier | | |
IRFIBC30GPBF | Power MOSFET | Vishay Siliconix | | |
IRG4IBC30KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | International Rectifier | | |
IRG4IBC30KDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | International Rectifier | | |
IRG4IBC30S | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier | | |
IRG4IBC30SPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier | | |
IRG4IBC30UD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | International Rectifier | | |
IRG4IBC30UDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | International Rectifier | | |
IRG4IBC30W | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier | | |
IRG4IBC30WPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier | | |
IBC32 | 5:1 Eighth-Brick IBC | Emerson Network Power | | |
IBC32AEN4896J | 5:1 Eighth-Brick IBC | Emerson Network Power | | |
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