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| IRFP131 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
IRFP131 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |  |  |
| *IRFP1*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| IRFP130 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
| IRFP131 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
| IRFP132 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
| IRFP133 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
| IRFP140 | 31A, 100V, 0.077 Ohm, N-Channel Power MOSFET | Fairchild Semiconductor | | |
| IRFP140 | Power MOSFET | Vishay Siliconix | | |
| IRFP1405 | AUTOMOTIVE MOSFET | International Rectifier | | |
| IRFP1405PBF | HEXFET^ Power MOSFET | International Rectifier | | |
| IRFP140A | Advanced Power MOSFET | Fairchild Semiconductor | | |
| IRFP140N | Power MOSFET(Vdss=100V, Rds(on)=0,052ohm, Id=33A) | International Rectifier | | |
| IRFP140N | 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET | Intersil Corporation | | |
| IRFP140NPBF | HEXFET Power MOSFET | International Rectifier | | |
| IRFP140PBF | Preferred for commercail-industrial applications where higher power levels preclude the use of TO-220 devices. | International Rectifier | | |
| IRFP140PBF | Power MOSFET | Vishay Siliconix | | |
| IRFP150 | Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A) | International Rectifier | | |
| IRFP150 | HIGH VOLTAGE POWER MOSFET DIE | IXYS Corporation | | |
| IRFP150 | Power MOSFET | Vishay Siliconix | | |
| IRFP150 | Advanced Power MOSFET | Fairchild Semiconductor | | |
| IRFP150A | Advanced Power MOSFET | Fairchild Semiconductor | | |
| IRFP150N | Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A) | International Rectifier | | |
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