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![](/forums/images/ca_evo_db/misc/spacer.gif) | K4E170412D DATASHEET | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
K4E170412D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
![](/forums/images/ca_evo_db/misc/spacer.gif) | *K4E170*: Расширенные результаты | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
K4E170411D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170412D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170412D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170412D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170811D | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170811D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170811D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170812D | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170812D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170812D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
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