Компонент | Описание | Производитель | PDF | Buy |
K4E170411D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170412D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170412D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170412D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170811D | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170811D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170811D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170812D | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170812D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E170812D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E171611D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E171611D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E171611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E171611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |