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![](/forums/images/ca_evo_db/misc/spacer.gif) | K4E660812E DATASHEET | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
K4E660812E | 8M x 8bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
![](/forums/images/ca_evo_db/misc/spacer.gif) | *K4E660812*: Расширенные результаты | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
K4E660812B | 8M x 8bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E660812B-JC-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E660812B-JC-5 | 8M x 8bit CMOS dynamic RAM with extended data out, 50ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E660812B-JC-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E660812B-JCL-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E660812B-JCL-5 | 8M x 8bit CMOS dynamic RAM with extended data out, 50ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E660812B-JCL-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E660812B-TC-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E660812B-TC-5 | 8M x 8bit CMOS dynamic RAM with extended data out, 50ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E660812B-TC-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E660812B-TC-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E660812B-TCL-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E660812B-TCL-5 | 8M x 8bit CMOS dynamic RAM with extended data out, 50ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E660812B-TCL-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E660812C | 8M x 8bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E660812C-JC-5 | 8M x 8bit CMOS dynamic RAM with extended data out, 50ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E660812C-JC-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E660812C-JCL-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E660812C-JCL-5 | 8M x 8bit CMOS dynamic RAM with extended data out, 50ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4E660812C-JCL-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
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