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| K7S1618T4C DATASHEET | |
Компонент | Описание | Производитель | PDF | Buy |
K7S1618T4C | 512Kx36 & 1Mx18 QDR II b4 SRAM | Samsung semiconductor | | |
| *K7S*: Расширенные результаты | |
Компонент | Описание | Производитель | PDF | Buy |
SM5610K7S | IC for quartz crystal oscillating module | Nippon Precision Circuits Inc | | |
K7S1618T4C | 512Kx36 & 1Mx18 QDR II b4 SRAM | Samsung semiconductor | | |
K7S1618U4C | 512Kx36 & 1Mx18 QDR II b4 SRAM | Samsung semiconductor | | |
K7S1636T4C | 512Kx36 & 1Mx18 QDR II b4 SRAM | Samsung semiconductor | | |
K7S1636U4C | 512Kx36 & 1Mx18 QDR II b4 SRAM | Samsung semiconductor | | |
K7S3218T4C | 1Mx36 & 2Mx18 QDRTM II b4 SRAM | Samsung semiconductor | | |
K7S3218T4C | 1Mx36 & 2Mx18 QDR II b4 SRAM | Samsung semiconductor | | |
K7S3218T4C-FECI33 | 1Mx36 & 2Mx18 QDRTM II b4 SRAM | Samsung semiconductor | | |
K7S3218T4C-FECI40 | 1Mx36 & 2Mx18 QDRTM II b4 SRAM | Samsung semiconductor | | |
K7S3218U4C | 1Mx36 & 2Mx18 QDR II b4 SRAM | Samsung semiconductor | | |
K7S3236T4C | 1Mx36 & 2Mx18 QDRTM II b4 SRAM | Samsung semiconductor | | |
K7S3236T4C-FECI33 | 1Mx36 & 2Mx18 QDRTM II b4 SRAM | Samsung semiconductor | | |
K7S3236T4C-FECI40 | 1Mx36 & 2Mx18 QDRTM II b4 SRAM | Samsung semiconductor | | |
K7S3236T4C-FECI45 | 1Mx36 & 2Mx18 QDRTM II b4 SRAM | Samsung semiconductor | | |
K7S3236T4C_08 | 1Mx36 & 2Mx18 QDR II b4 SRAM | Samsung semiconductor | | |
K7S3236U4C | 1Mx36 & 2Mx18 QDR II b4 SRAM | Samsung semiconductor | | |
FK7SM-12 | Nch POWER MOSFET HIGH-SPEED SWITCHING USE | Powerex Power Semiconductors | | |
FK7SM-12 | HIGH-SPEED SWITCHING USE | Mitsubishi Electric Semiconductor | | |
FK7SM-12 | High-Speed Switching Use Nch Power MOS FET | Renesas Technology Corp | | |
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