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| KM416C1004CTL-5 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
KM416C1004CTL-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh | Samsung semiconductor |  |  |
| *KM416C1004CT*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| KM416C1004CT-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms | Samsung semiconductor | | |
| KM416C1004CT-45 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns | Samsung semiconductor | | |
| KM416C1004CT-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms | Samsung semiconductor | | |
| KM416C1004CT-5 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung semiconductor | | |
| KM416C1004CT-6 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms | Samsung semiconductor | | |
| KM416C1004CT-6 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung semiconductor | | |
| KM416C1004CT-L45 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns | Samsung semiconductor | | |
| KM416C1004CT-L5 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung semiconductor | | |
| KM416C1004CT-L6 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung semiconductor | | |
| KM416C1004CTL-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh | Samsung semiconductor | | |
| KM416C1004CTL-6 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh | Samsung semiconductor | | |
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