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| KM416C1204CJ-L6 DATASHEET | |
Компонент | Описание | Производитель | PDF | Buy |
KM416C1204CJ-L6 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung semiconductor | | |
| *KM416C1204C*: Расширенные результаты | |
Компонент | Описание | Производитель | PDF | Buy |
KM416C1204C | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
KM416C1204C-45 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
KM416C1204C-5 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
KM416C1204C-6 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
KM416C1204C-L45 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
KM416C1204C-L5 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
KM416C1204C-L6 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
KM416C1204CJ-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms | Samsung semiconductor | | |
KM416C1204CJ-5 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung semiconductor | | |
KM416C1204CJ-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms | Samsung semiconductor | | |
KM416C1204CJ-6 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung semiconductor | | |
KM416C1204CJ-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms | Samsung semiconductor | | |
KM416C1204CJ-L45 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns | Samsung semiconductor | | |
KM416C1204CJ-L5 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung semiconductor | | |
KM416C1204CJ-L6 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung semiconductor | | |
KM416C1204CJL-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh | Samsung semiconductor | | |
KM416C1204CJL-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh | Samsung semiconductor | | |
KM416C1204CT-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms | Samsung semiconductor | | |
KM416C1204CT-45 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns | Samsung semiconductor | | |
KM416C1204CT-5 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung semiconductor | | |
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