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| KM416V254DT-7 DATASHEET | |
Компонент | Описание | Производитель | PDF | Buy |
KM416V254DT-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period | Samsung semiconductor | | |
| *KM416V254D*: Расширенные результаты | |
Компонент | Описание | Производитель | PDF | Buy |
KM416V254D | 256K x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
KM416V254DJ-5 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period | Samsung semiconductor | | |
KM416V254DJ-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period | Samsung semiconductor | | |
KM416V254DJ-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period | Samsung semiconductor | | |
KM416V254DJL-5 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh | Samsung semiconductor | | |
KM416V254DJL-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh | Samsung semiconductor | | |
KM416V254DJL-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh | Samsung semiconductor | | |
KM416V254DT-5 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period | Samsung semiconductor | | |
KM416V254DT-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period | Samsung semiconductor | | |
KM416V254DT-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period | Samsung semiconductor | | |
KM416V254DTL-5 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh | Samsung semiconductor | | |
KM416V254DTL-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh | Samsung semiconductor | | |
KM416V254DTL-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh | Samsung semiconductor | | |
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