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![](/forums/images/ca_evo_db/misc/spacer.gif) | KMM5368003BSWG DATASHEET | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
KMM5368003BSWG | 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
![](/forums/images/ca_evo_db/misc/spacer.gif) | *KMM536*: Расширенные результаты | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
KMM5361203C2W | 1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KMM5361203C2WG | 1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KMM5361205C2W | 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KMM5361205C2WG | 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KMM53616000BK | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KMM53616000BKG | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KMM53616000CK | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KMM53616000CKG | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KMM53616004BK | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KMM53616004BKG | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KMM53616004CK | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KMM53616004CKG | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KMM5362203C2W | 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KMM5362203C2WG | 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KMM5362205C2W | 2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KMM5362205C2WG | 2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KMM53632000BK | 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KMM53632000BKG | 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KMM53632000CK | 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KMM53632000CKG | 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
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