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| L-457 DATASHEET | |
Компонент | Описание | Производитель | PDF | Buy |
L-457 | Left-Handed Winding Direction | Rhombus Industries Inc. | | |
| *L-45*: Расширенные результаты | |
Компонент | Описание | Производитель | PDF | Buy |
DECL-45 | 10K ECL Logic Buffered Delay 16-Pin Modules | Rhombus Industries Inc. | | |
DS1100L-45 | 3.3V 5-Tap Economy Timing Element Delay Line | Dallas Semiconductor | | |
EPA073HL-45 | 14 Pin SMD 5 Tap Low Profile TTL Compatible Active Delay Lines | PCA ELECTRONICS INC. | | |
UM61166L-45 | 4K x 16 CMOS CACHE RAM | UMC Corporation | | |
EPA1220HL-45 | 14 Pin DIP 5 Tap TTL Compatible High Speed Active Delay Lines | PCA ELECTRONICS INC. | | |
MSM511000CL-45 | 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE | OKI electronic componets | | |
MSM518126/L-45 | 131,072-Word x 8-Bit DYNAMIC RAM | OKI electronic componets | | |
HYB314265BJL-45 | 256K x 16-Bit EDO-Dynamic RAM | Siemens Semiconductor Group | | |
KM48V8104BSL-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung semiconductor | | |
KM48V8004BSL-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung semiconductor | | |
KM48V8004BKL-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung semiconductor | | |
KM48V8004CKL-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung semiconductor | | |
KM48V8004CSL-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung semiconductor | | |
KM48V8104CSL-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung semiconductor | | |
KM48V8104CKL-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung semiconductor | | |
KM416V1204CJL-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh | Samsung semiconductor | | |
KM416C1204CTL-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh | Samsung semiconductor | | |
KM416V1004CJL-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh | Samsung semiconductor | | |
KM416V1004CTL-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh | Samsung semiconductor | | |
KM416C1004CJL-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh | Samsung semiconductor | | |
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