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| M141471JAP DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
M141471JAP | Thick Film Low Profile SIP Conformal Coated Resistor Networks | Bi technologies |  |  |
| *M1414*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| CM1414 | 2 Channel Headset EMI Filter with ESD Protection | California Micro Devices Corp | | |
| LM1414 | Dual Differential Voltage Comparator | National Semiconductor | | |
| MM1414 | Protection of Lithium Ion Batteries | Mitsumi Electronics, Corp. | | |
| CM1414-03CP | 2 Channel Headset EMI Filter with ESD Protection | California Micro Devices Corp | | |
| CM1414-03CS | 2 Channel Headset EMI Filter with ESD Protection | California Micro Devices Corp | | |
| TIM1414-10LA-252 | HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz | Toshiba Semiconductor | | |
| FLM1414-12F | X, Ku-Band Internally Matched FET | Eudyna Devices Inc | | |
| FLM1414-15F | X,Ku-Band Internally Matched FET | Eudyna Devices Inc | | |
| TIM1414-18L | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| TIM1414-18L-252 | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| TIM1414-2-252 | HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz | Toshiba Semiconductor | | |
| TIM1414-30L | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| TIM1414-4-252 | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| FLM1414-4F | Internally Matched Power GaAs FET | Eudyna Devices Inc | | |
| TIM1414-5-252 | POWER GAAS FET | Toshiba Semiconductor | | |
| TIM1414-5L | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| FLM1414-6F | X, Ku-Band Internally Matched FET | Eudyna Devices Inc | | |
| TIM1414-7 | MICROWAVE POWER GAAS FET | Toshiba Semiconductor | | |
| TIM1414-7-252 | HIGH POWER P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz | Toshiba Semiconductor | | |
| FLM1414-8F | Internally Matched Power GaAs FET | Eudyna Devices Inc | | |
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