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| MJD112_03 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
MJD112_03 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | STMicroelectronics |  |  |
| *MJD112_*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| MJD112-001 | Complementary Darlington Power Transistors | ON Semiconductor | | |
| MJD112-001 | Complementary Darlington Power Transistors | ON Semiconductor | | |
| MJD112-1 | Complementary Darlington Power Transistors | ON Semiconductor | | |
| MJD112-1G | Complementary Darlington Power Transistors | ON Semiconductor | | |
| MJD1121 | SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS | Motorola, Inc | | |
| MJD112G | Complementary Darlington Power Transistors | ON Semiconductor | | |
| MJD112G | Complementary Darlington Power Transistors | ON Semiconductor | | |
| MJD112L | EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) | KEC(Korea Electronics) | | |
| MJD112RL | Complementary Darlington Power Transistors | ON Semiconductor | | |
| MJD112RL | Complementary Darlington Power Transistors | ON Semiconductor | | |
| MJD112RL | Complementary Darlington Power Transistors | ON Semiconductor | | |
| MJD112RLG | Complementary Darlington Power Transistors | ON Semiconductor | | |
| MJD112T4 | SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS | Motorola, Inc | | |
| MJD112T4 | Complementary Darlington Power Transistors | ON Semiconductor | | |
| MJD112T4 | Complementary Darlington Power Transistors | ON Semiconductor | | |
| MJD112T4 | Complementary power Darlington transistors | STMicroelectronics | | |
| MJD112T4G | Complementary Darlington Power Transistors | ON Semiconductor | | |
| MJD112T4G | Complementary Darlington Power Transistors | ON Semiconductor | | |
| MJD112_03 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | STMicroelectronics | | |
| MJD112_06 | Complementary Darlington Power Transistors | ON Semiconductor | | |
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