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![](/forums/images/ca_evo_db/misc/spacer.gif) | MR18R1628AF1-CN9 DATASHEET | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
MR18R1628AF1-CN9 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
![](/forums/images/ca_evo_db/misc/spacer.gif) | *MR18R162*: Расширенные результаты | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
MR18R16224DF0 | Key Timing Parameters | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R16228DF0 | Key Timing Parameters | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R1622AF0-CK8 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R1622AF0-CM8 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R1622DF0 | Key Timing Parameters | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R1622GDF0 | Key Timing Parameters | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R16248EG0 | Key Timing Parameters | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R1624AF0-CK8 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R1624AF0-CM8 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R1624AF1-CN9 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R1624AF1-CT9 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R1624EG0-CK8 | Key Timing Parameters | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R1624EG0-CM8 | Key Timing Parameters | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R1624EG0-CT9 | Key Timing Parameters | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R1624GEG0 | Key Timing Parameters | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R1628AF0-CK8 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R1628AF0-CM8 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R1628AF1-CN9 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R1628AF1-CT9 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R1628EG0-CK8 | Key Timing Parameters | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
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