| Компонент | Описание | Производитель | PDF | Buy |
| 2N2102 | COMPLEMEMTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES | Micro Electronics |  |  |
| 2N2102 | Bipolar NPN Device in a Hermetically sealed TO39 | Seme LAB | | |
| 2N2102 | EPITAXIAL PLANAR NPN | STMicroelectronics | | |
| 2N2102 | AMPLIFIER TRANSISTOR NPN SILICON | Boca Semiconductor Corporation | | |
| 2N2102 | Diode TP-39 | New Jersey Semi-Conductor Products, Inc. | | |
| 2N2102 | SI NPN POWER BJT, I(C) = 1A TO 2.4 A | New Jersey Semi-Conductor Products, Inc. | | |
| 2N2102 | MEDIUM POWER AMPLIFIER & SWITCH | Comset Semiconductor | | |
| RN2102 | Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications | Toshiba Semiconductor | | |
| TN2102 | Power Transistors | Central Semiconductor Corp | | |
| RN2102 | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) | Toshiba Semiconductor | | |
| ECN2102 | HIGH-VOLTAGE MONOLITHIC IC | Hitachi Semiconductor | | |
| AGN21024 | ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY | Nais(Matsushita Electric Works) | | |
| AGN21024Z | ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY | Nais(Matsushita Electric Works) | | |
| 2N2102A | SMALL SIGNAL TRANSISTORS | Central Semiconductor Corp | | |
| 2N2102A | N-P-N EPITAXIAL PLANAR SILICON TRANSISTORS | New Jersey Semi-Conductor Products, Inc. | | |
| 2N2102A | Diode TP-39 | New Jersey Semi-Conductor Products, Inc. | | |
| RN2102ACT | Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications | Toshiba Semiconductor | | |
| N2102B | Pattern Generator | Agilent(Hewlett-Packard) | | |
| RN2102CT | Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications | Toshiba Semiconductor | | |
| XC62KN2102DB | Negative Voltage Regulators | Torex Semiconductor | | |
