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| NAND04GA3C2AN6E DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
NAND04GA3C2AN6E | 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory | STMicroelectronics |  |  |
| *NAND04G*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| NAND04G-B2D | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GA3C2A | 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory | STMicroelectronics | | |
| NAND04GA3C2AN1E | 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory | STMicroelectronics | | |
| NAND04GA3C2AN1F | 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory | STMicroelectronics | | |
| NAND04GA3C2AN6E | 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory | STMicroelectronics | | |
| NAND04GA3C2AN6F | 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory | STMicroelectronics | | |
| NAND04GR3B2CN1F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GR3B2CN6E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GR3B2CN6F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GR3B2CZL1E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GR3B2CZL1F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GR3B2CZL6E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GR3B2CZL6F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GR3B2D | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GR3B2DN1E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GR3B2DN1F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GR3B2DN6E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GR3B2DN6F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GR3B2DZL1E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GR3B2DZL1F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
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