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| PA806C03 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
PA806C03 | SCHOTTKY BARRIER DIODE | List of Unclassifed Manufacturers |  |  |
| *PA806*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| GPA806 | 8.0 AMPS. Glass Passivated Rectifiers | Taiwan Semiconductor Company, Ltd | | |
| GPA806 | 8.0 AMPS. Glass Passivated Rectifiers | Taiwan Semiconductor Company, Ltd | | |
| GPA806 | 8.0 AMPs. Glass Passivated Rectifiers | Taiwan Semiconductor Company, Ltd | | |
| GPA806 | LEADED (THRU-HOLE) General Purpose & Fast Recovery Rectifiers | RFE international | | |
| GPA806 | 8 Amp Glass Passivated Rectifier | Micro Commercial Components | | |
| GPA806 | 8.0 AMPS. Glass Passivated Rectifiers | Taiwan Semiconductor Company, Ltd | | |
| UPA806 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD | NEC | | |
| PA806C03 | SCHOTTKY BARRIER DIODE | List of Unclassifed Manufacturers | | |
| GPA806DT | 8 Amp Glass Passivated Rectifier | Micro Commercial Components | | |
| UPA806T | NPN SILICON HIGH FREQUENCY TRANSISTOR | California Eastern Labs | | |
| UPA806T | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD | NEC | | |
| UPA806T-T1 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD | NEC | | |
| UPA806T-T1-A | NPN SILICON HIGH FREQUENCY TRANSISTOR | California Eastern Labs | | |
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