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| PI0860DG-21H DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
PI0860DG-21H | DROP-IN ISOLATOR | PREMIER DEVICES, INC. |  |  |
| *PI08*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| K8D638UTM-PI08 | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | Samsung semiconductor | | |
| K8D638UBM-PI08 | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | Samsung semiconductor | | |
| K8D638UTM-PI08 | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | Samsung semiconductor | | |
| K8D638UBM-PI08 | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | Samsung semiconductor | | |
| K8D1716UTC-PI08 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory | Samsung semiconductor | | |
| K8D6316UBM-PI08 | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | Samsung semiconductor | | |
| K8D6316UTM-PI08 | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | Samsung semiconductor | | |
| K8D6316UTM-PI08 | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | Samsung semiconductor | | |
| K8D6316UBM-PI08 | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | Samsung semiconductor | | |
| K8D1716UBC-PI08 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory | Samsung semiconductor | | |
| PI0860DG-21 | DROP-IN ISOLATOR | PREMIER DEVICES, INC. | | |
| PI0860DG-21H | DROP-IN ISOLATOR | PREMIER DEVICES, INC. | | |
| IPI086N10N3G | OptiMOS3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) | Infineon Technologies AG | | |
| IPI08CN10NG | OptiMOS2 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) | Infineon Technologies AG | | |
| SPI08N50C3 | New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated | Infineon Technologies AG | | |
| SPI08N50C3 | Cool MOS Power Transistor | Infineon Technologies AG | | |
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