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| PTF041501E DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
PTF041501E | Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz | Infineon Technologies AG |  |  |
| *PTF0*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| PTF041501E | Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz | Infineon Technologies AG | | |
| PTF041501F | Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz | Infineon Technologies AG | | |
| PTF080101 | LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ | Infineon Technologies AG | | |
| PTF080101M | High Power RF LDMOS Field Effect Transistor 10 W, 450 960 MHz | Infineon Technologies AG | | |
| PTF080101S | Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz | Infineon Technologies AG | | |
| PTF080451 | LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz | Infineon Technologies AG | | |
| PTF080451E | LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz | Infineon Technologies AG | | |
| PTF080601 | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz | Infineon Technologies AG | | |
| PTF080601A | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz | Infineon Technologies AG | | |
| PTF080601E | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz | Infineon Technologies AG | | |
| PTF080601F | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz | Infineon Technologies AG | | |
| PTF080901 | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz | Infineon Technologies AG | | |
| PTF080901E | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz | Infineon Technologies AG | | |
| PTF080901F | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz | Infineon Technologies AG | | |
| PTF081301E | Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz | Infineon Technologies AG | | |
| PTF081301F | Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz | Infineon Technologies AG | | |
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