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| R8810 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
R8810 | 16-BIT RISC MICROCONTROLLER | RDC Semiconductor |  |  |
| *R881*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| HDSP-R881 | 8 x 8 Rich Color General Purpose Dot Matrix Displays 47.8 mm (1.88 inch) Package | Agilent(Hewlett-Packard) | | |
| BP64R881-02 | DF-B Dielectric Filters | Token Electronics Industry Co., Ltd. | | |
| RDXA-R881-T836A | Dielectric Ceramic Filters and Duplexers | Raltron Electronics Corporation | | |
| R8810 | 16-BIT RISC MICROCONTROLLER | RDC Semiconductor | | |
| R8810I | 16-BIT RISC MICROCONTROLLER | RDC Semiconductor | | |
| R8810LV | 16-Bit RISC Microcontroller Users Manual | RDC Semiconductor | | |
| K4R881869 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R881869D | 256/288Mbit RDRAM(D-die) | Samsung semiconductor | | |
| K4R881869I-DC | Direct RDRAM Product Guide | Samsung semiconductor | | |
| K4R881869M | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R881869M-NBCCG6 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R881869M-NCG6 | 512K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung semiconductor | | |
| K4R881869M-NCK7 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R881869M-NCK8 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | | |
| BP33R881S30A | DF-B Dielectric Filters | Token Electronics Industry Co., Ltd. | | |
| BP64R881S30A | DF-B Dielectric Filters | Token Electronics Industry Co., Ltd. | | |
| VPR881U6R3E1A | Radial Leaded Aluminum Electrolytic | List of Unclassifed Manufacturers | | |
| VPR881U6R3E1A | Radial Leaded Aluminum Electrolytic | Cornell Dubilier Electronics | | |
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