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| SB157/106C025-20-W-AG/AL DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
SB157/106C025-20-W-AG/AL | Schottky cr Barrier Diode Wafer 157 x 106 Mils, 25 Volt, 20 Amp, 0.39VF. | TRANSYS Electronics Limited |  |  |
| *SB157*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| SB157 | Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 20 Amp, 0.37VF. | TRANSYS Electronics Limited | | |
| SB157/106C015-20-W-AG/AL | Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 20 Amp, 0.37VF. | TRANSYS Electronics Limited | | |
| SB157/106C015-30-W-AG/AL | Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 30 Amp, 0.38VF. | TRANSYS Electronics Limited | | |
| SB157/106C025-20-W-AG/AL | Schottky cr Barrier Diode Wafer 157 x 106 Mils, 25 Volt, 20 Amp, 0.39VF. | TRANSYS Electronics Limited | | |
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| 2SB1572 | Silicon PNP Epitaxial Planar | Guangdong Kexin Industrial Co.,Ltd | | |
| 2SB1574 | Silicon PNP epitaxial planar type(For low-frequency output amplification) | Panasonic Semiconductor | | |
| 2SB1574 | Silicon PNP Epitaxial Planar Type | Guangdong Kexin Industrial Co.,Ltd | | |
| 2SB1578 | PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING | NEC | | |
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